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Home >> Products >>Memory >>DDR SDRAM >> WNM3008-3/TR
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WNM3008-3/TR

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Descriptions

The WNM3008 is N-Channel enhancement MOS  Field Effect Transistor. Uses advanced trench  technology and design to provide excellent RDS (ON) with low gate charge. 

This device is suitable for use  in DC-DC conversion, power switch and charging  circuit. Standard Product WNM3008 is Pb-free and  Halogen-free.

Features 

Trench Technology  

Supper high density cell design  

Excellent ON resistance for higher DC current  

Extremely Low Threshold Voltage 

Small package SOT-23

Applications 

Driver for Relay, Solenoid, Motor, LED etc.  

DC-DC converter circuit  

Power Switch  

Load Switch  

Charging


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