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FM24CL64B-DGTR

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  1. Original & New
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  1. TDFN-8
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  1. 21+
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  1. Infineon
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Datasheet

FM24CL64B-DGTR.pdf


Description

Infineon Technologies Non-Volatile Serial F-RAM

Cypress Semiconductor Serial F-RAM (Ferroelectric RAM) Memory combines the nonvolatile data storage capabilities of ROM with the speed of RAM. Serial F-RAMs are available in a variety of interface and density options, including SPI and I 2 C interfaces, industry standard packages, and densities ranging from 4KB-4MB. Cypress serial F-RAM offers three unique advantages over other nonvolatile memory technologies: fast write speed, extremely high endurance, and low power consumption. Serial F-RAM has 100 trillion write cycles, well beyond the 1 million write cycle limit of EEPROM. Therefore, support is provided throughout the life of the product without the need for wear-leveling techniques.

These devices use ferroelectric materials that are resistant to exposure to radiation and magnetic fields. The device does not suffer from soft error rates, making it an excellent replacement for MRAM. These F-RAM devices are primarily used in mission-critical applications, including smart meters, automotive electronics, industrial control and automation equipment, multifunction printers, and portable medical devices.

CHARACTERISTIC

  • Fast write speed with no write latency

  • instant non-volatile

  • 100 trillion read and write cycles

  • Low 3mA Active Current and 6µA Low Standby Current

  • No batteries or capacitors required

  • Does not require wear leveling techniques

  • Inherently resistant to gamma radiation

  • 151-year data retention period

  • Automotive AEC-Q100 qualified parts available

APPLICATION

  • Mission Critical Applications

  • smart meter

  • Automotive Electronics

  • Industrial Control and Automation Equipment

  • Multifunction printers and portable medical devices


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