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NDT452AP
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Datasheet
Description
Power SOT N-Channel Enhancement Mode Power Field Effect Transistors are produced using Fairchild's proprietary high-density DMOS technology. This very high density process is tailored to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage applications such as notebook computer power management and DC motor control. • -5A, -30V. RDS(ON) = 0.065 RDS(ON) = 0.3 Ω @ VGS = -10VRDS(ON) = 0.1 RDS(ON) = 0.3 Ω @ VGS = -4.5V • Very low RDS(ON) can be achieved by high density design . • High power and high current handling capability in a widely used surface mount package. • This product is general usage and suitable for many different applications All the evaluation(0)
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