IRLML6401TRPBF.pdf

These P-Channel MOSFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET®

power MOSFETs are well known for, provides the designer with

an extremely efficient and reliable device for use in battery and

load management.

A thermally enhanced large pad leadframe has been

incorporated into the standard SOT-23 package to produce a

HEXFET Power MOSFET with the industry's smallest footprint.

This package, dubbed the Micro3™, is ideal for applications

where printed circuit board space is at a premium. The low

profile (<1.1mm) of the Micro3 allows it to fit easily into

extremely thin application environments such as portable

electronics and PCMCIA cards. The thermal resistance and

power dissipation are the best available.