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STW9N150

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Datasheet

STW9N150.pdf


Description

Features

■ 100% avalanche tested

■ Avalanche ruggedness

■ Gate charge minimized

■ Very low intrinsic capacitances

■ High speed switching

■ Very low on-resistance

Application

■ Switching applications

Description

Using the well consolidated high voltage MESH

OVERLAY™ process, STMicroelectronics has

designed an advanced family of Power MOSFETs

with outstanding performances. The strengthened

layout coupled with the company’s proprietary

edge termination structure, gives the lowest

RDS(on) per area, unrivalled gate charge and

switching characteristics.


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