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BSR316PH6327XTSA1

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Price
$0.57
Cumulative sales0Cumulative evaluation0
Desc
Date Code
  1. 21+
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Quantity
- +
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DESCRIPTION
Mfr
Infineon Technologies
Series
SIPMOS®
Package
TR
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.8Ohm @ 360mA, 10V
Vgs(th) (Max) @ Id
1V @ 170μA
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
165 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
500mW (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SC59-3
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
BSR316


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SHENZHEN JDW ELECTRONIC 

CO., LIMITED



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