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Home >> Products >>Discrete Semiconductor >>Transistors - Fets, Mosfets - Single >> DMG6602SVT
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Product Detail

DMG6602SVT

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Cumulative sales0Cumulative evaluation0
Type
  1. Original & New
Desc
  1. SOT23-6
Date Code
  1. 21+
Brand
  1. Diodes Incorporated
Quantity
- +
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Datasheet

DMG6602SVT.pdf


DESCRIPTION
TYPE
DESCRIPTION
Category
Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Arrays
Mfr
Diodes Incorporated
Series
-
Package
Tape & Reel (TR)
Product Status
Not For New Designs
FET Type
N and P-Channel
FET Feature
Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
3.4A, 2.8A
Rds On (Max) @ Id, Vgs
60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id
2.3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
400pF @ 15V
Power - Max
840mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
TSOT-26
Base Product Number
DMG6602


All the evaluation(0)
Consistent with the description
0

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