IKW75N60T.pdf

IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Very low VCE(sat) 1.5V (typ.) 

 Maximum Junction Temperature 175°C 

 Short circuit withstand time 5s 

 Positive temperature coefficient in VCE(sat) 

 very tight parameter distribution 

 high ruggedness, temperature stable behaviour 

 very high switching speed

 Low EMI 

 Very soft, fast recovery anti-parallel Emitter Controlled HE diode 

 Qualified according to JEDEC1) for target applications 

 Pb-free lead plating; RoHS compliant 

 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/