FM25V02A-GTR.pdf

The FM25V02A is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.

Features 

■ 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8 

❐ High-endurance 100 trillion (1014) read/writes 

❐ 151-year data retention (See Data Retention and Endurance on page 14) 

❐ NoDelay™ writes 

❐ Advanced high-reliability ferroelectric process 

■ Very fast serial peripheral interface (SPI) 

❐ Up to 40-MHz frequency 

❐ Direct hardware replacement for serial flash and EEPROM 

❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1) 

■ Sophisticated write-protection scheme 

❐ Hardware protection using the Write Protect (WP) pin 

❐ Software protection using Write Disable instruction 

❐ Software block protection for 1/4, 1/2, or entire array 

■ Device ID 

❐ Manufacturer ID and Product ID 

■ Low power consumption 

❐ 2.5-mA active current at 40 MHz 

❐ 150-A standby current 

❐ 8-A sleep mode current 

■ Low-voltage operation: VDD = 2.0 V to 3.6 V 

■ Industrial temperature: –40 C to +85 C 

■ Packages 

❐ 8-pin small outline integrated circuit (SOIC) package 

❐ 8-pin dual flat no-leads (DFN) package 

■ Restriction of hazardous substances (RoHS) compliant