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Home >> Products >>Discrete Semiconductor >>Transistors - Fets, Mosfets - Single >> STD6N95K5
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Product Detail

STD6N95K5

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

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Description

STD6N95K5.pdf

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications Product status link requiring superior power density and high efficiency.

Parameters

  • All features

    • DPAK 950 V worldwide best RDS(on)

    • Worldwide best FOM (figure of merit)

    • Ultra low gate charge

    • 100% avalanche tested

    • Zener-protected


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