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2N7002
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Description
N-Channel Enhancement Mode Field Effect Transistor 2N7000, 2N7002, NDS7002A Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mAdc and can deliver pulsed currents up to 2 A. These products are particularly suited for low−voltage, low−current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features • High Density Cell Design for Low RDS(on) • Voltage Controlled Small Signal Switch • Rugged and Reliable • High Saturation Current Capability • This Device is Pb−Free and Halogen Free All the evaluation(0)
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