N-Channel Enhancement Mode Field Effect Transistor

2N7000, 2N7002, NDS7002A  Description

These N−channel enhancement mode field effect transistors are

produced using onsemi’s proprietary, high cell density, DMOS

technology. These products have been designed to minimize on−state

resistance while providing rugged, reliable, and fast switching

performance. They can be used in most applications requiring up to

400 mAdc and can deliver pulsed currents up to 2 A. These products

are particularly suited for low−voltage, low−current applications, such

as small servo motor control, power MOSFET gate drivers, and other

switching applications.

Features

• High Density Cell Design for Low RDS(on)

• Voltage Controlled Small Signal Switch

• Rugged and Reliable

• High Saturation Current Capability

• This Device is Pb−Free and Halogen Free